| 摘要 |
<p>A method for manufacturing a phase shift mask is provided to form a shielding layer pattern using a general binary blank mask by patterning a shielding layer on an upper portion of a light transmittance substrate to form the shielding layer pattern dividing into a light transmittance region and a phase shift region. A shielding layer pattern(102a) is formed on an upper portion of a light transmittance substrate(100). The light transmittance substrate exposed by the shielding layer pattern is dry-etched to form a trench(105) of a pre-set depth. A halftone layer(106) is formed to fully gap-fill the trench. The halftone layer and the shielding layer pattern are etched until a surface of the light transmittance substrate is exposed and the surface thereof is planarized to form a gap-filled halftone layer pattern in the trench of the light transmittance substrate. The shielding layer pattern is a metal. The halftone layer is a phase shift material.</p> |
