| 摘要 |
A CMOS image sensor including color filters having uniform photosensitivity is provided to form uniformly photosensitivity thereof by improving photosensitivity of a B filter region. A semiconductor substrate(100) comprises a plurality of pixels which are formed with photodiodes(120) and transistors. Inner lens(150R,150G,150B) corresponding to the photodiodes of unit pixels are formed on the semiconductor substrate. R, G, and B color filters(190R,190G,190B) are arranged in a constant interval on the semiconductor substrate and corresponds to the photodiodes and the inner lens. The inner lens has different aperture ratios and different curvature according to the R, G, and B color filters.
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