发明名称 |
Method for manufacture of semiconductor device |
摘要 |
A method for the manufacture of a ferroelectric memory. The ferroelectric memory includes a plurality of memory cells for storing binary data as polarization states of a ferroelectric. The method includes a data writing step of writing those binary data which will be read at a potential level lower than a reference potential level during data reading, to all of the memory cells prior to a heat treatment step.
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申请公布号 |
US7154767(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20040992715 |
申请日期 |
2004.11.22 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD |
发明人 |
SAKUMA SHINZO |
分类号 |
G11C11/22;G11C29/08;H01L21/8246;H01L27/10;H01L27/105 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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