| 摘要 |
A semiconductor device and its manufacturing method are provided to form an RF BJT(Bipolar Junction Transistor) with enhanced frequency characteristics and noise characteristics by using a conventional CMOS manufacturing process. A gate oxide layer(121) is formed on a semiconductor substrate(100) with a P well(102) and an N well(101). The gate oxide layer is selectively removed from the resultant structure corresponding to the P well. A base(132) made of polysilicon is formed on the P well. A first photoresist pattern for exposing the base to the outside is formed on the substrate. P type ions are implanted into the base through the first photoresist pattern. The first photoresist pattern is removed therefrom. A second photoresist pattern for exposing the P and N wells to the outside is formed thereon. An emitter and a collector(107,106) are formed on the resultant structure by implanting N type ions into the P and N wells through the second photoresist pattern.
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