| 摘要 |
A method of evaluating any crystal defect of silicon wafer, comprising immersing a silicon wafer in an etching solution to thereby carry out etching of the wafer surface and observing any etch pits occurring on the etched wafer surface, characterized in that the silicon wafer for crystal defect evaluation is a low-resistivity wafer whose electric resistance is <= 1 Omega .cm, that the etching solution consists of a mixture of hydrofluoric acid, nitric acid, acetic acid and water wherein iodine or an iodide is contained, the nitric acid having the largest volume ratio in the etching solution, and that the etching speed of silicon wafer is regulated so as to be <= 100 nm/min. Thus, there can be provided a method of crystal defect evaluation wherein any crystal defect of low-resistivity silicon wafer can be evaluated with excellent defect detecting capability with the use of a chromium-less etching solution wherein no harmful chromium is contained.
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