NITRIDE SEMICONDUCTOR DEVICE

摘要

A nitride semiconductor device is provided to improve ohmic contact characteristics and a current diffusion effect by using a multilayer super-lattice layer structure as a P type contact layer. A nitride semiconductor device comprises a substrate(100), an N type clad layer(120) on the substrate, an active layer(130) on a portion of the N type clad layer, a P type clad layer(140) on the active layer, a P type contact layer on the P type clad layer, a P type electrode(170) on the P type contact layer and an N type electrode(180) on the N type clad layer. A multilayer P type super-lattice layer structure(200) is used as the P type contact layer. The multilayer P type super-lattice layer structure is composed of a plurality of nitride semiconductor layers with different energy bands.