发明名称 Sensitivity enhanced biomolecule field effect transistor
摘要 There is provided a biomolecule FET enhancing a sensitivity. The biomolecule FET includes a substrate, first and second impurity regions formed on both sides of the substrate, and doped with impurities of a polarity opposite to that of the substrate, a gate formed on the substrate and being in contact with the first and second impurity regions, and a probe biomolecule attached to the gate. A region of the gate adjacent to the first impurity region is wider than a region thereof adjacent to the second impurity region. A density of the probe biomolecule attached to the surface of the gate is increased, and when detecting a level of hybridization of the probe biomolecule and the target biomolecule, its sensitivity is improved.
申请公布号 US7151301(B2) 申请公布日期 2006.12.19
申请号 US20050057642 申请日期 2005.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOO KYU-TAE;LIM GEUN-BAE;KIM JOON-HO;NAMKOONG KAK
分类号 H01L29/76;C12Q1/68;G01N27/414;G01N33/487 主分类号 H01L29/76
代理机构 代理人
主权项
地址