发明名称 |
Structures for light emitting devices with integrated multilayer mirrors |
摘要 |
A substrate for supporting epitaxial growth of light emitting semiconductor devices having a non-crystalline multilayer reflection controlling stack under a thin layer of single crystal silicon is shown. A III-Nitride or other semiconductor stimulated emission device is grown on the thin layer of silicon.
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申请公布号 |
US7151284(B2) |
申请公布日期 |
2006.12.19 |
申请号 |
US20040843518 |
申请日期 |
2004.05.11 |
申请人 |
GWO SHANGJR |
发明人 |
GWO SHANGJR |
分类号 |
H01L29/24;H01S5/00;H01S5/02;H01S5/04;H01S5/10;H01S5/183;H01S5/343 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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