发明名称 |
Method of manufacturing a semiconductor device with different lattice properties |
摘要 |
To reduce a current loss through a channel and improve electron mobility, a first semiconductor layer and a second semiconductor layer (sequentially formed on a semiconductor substrate) have different lattice properties. The first semiconductor layer and the second semiconductor layer may be etched to form a first semiconductor pattern. A third semiconductor layer having a lattice property substantially identical to that of the first semiconductor layer may be formed over the first semiconductor pattern. The third semiconductor layer may then be etched to form a second semiconductor pattern. A gate may be formed on the second semiconductor pattern. The contact surface between the second semiconductor pattern and the gate pattern may consequently increased to reduce a current loss. Further, the lattice properties may be changed to improve electron mobility of the semiconductor layers.
|
申请公布号 |
US7151019(B2) |
申请公布日期 |
2006.12.19 |
申请号 |
US20060494470 |
申请日期 |
2006.07.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG JEONG-HWAN |
分类号 |
H01L21/28;H01L21/338;H01L21/00;H01L21/3205;H01L21/335;H01L21/336;H01L21/76;H01L21/8234;H01L29/10;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|