High voltage lateral diffused MOSFET device

摘要

A semiconductor device comprises a substrate. A source active region and a drain active region are disposed in the substrate and spaced from one another in a first dimension. The source active region has a first and a second outline defining a width of the source active region in a second dimension substantially perpendicular to the first dimension. A gate has a third outline and a fourth outline defining a width of the gate not more than the width of the source active region. The gate is disposed between a source in the source active region and a drain in the drain active region and between the first and the second outline. The source has a width not more than the width of the gate. The source is disposed proximate the gate and between the third and the fourth outline.