发明名称 Row decoder with low gate induce drain leakage current
摘要 A row decoder with low gate induce drain leakage current (GIDL) comprising a CMOS circuit is provided. The CMOS circuit comprises a first NMOS transistor and a first PMOS transistor. The row decoder of the present invention further comprises a second PMOS transistor and a local voltage generator. Wherein, a first source/drain of the second PMOS transistor is electrically coupled to a base of the first PMOS transistor, and a second source/drain of the second PMOS transistor is electrically coupled to a base thereof and a DC bias. Moreover, the local voltage generator provides a voltage signal to a gate of the second PMOS transistor, which controls the second PMOS transistor to work in conductive, partial conductive or open circuit mode.
申请公布号 US7151712(B1) 申请公布日期 2006.12.19
申请号 US20050163436 申请日期 2005.10.19
申请人 WINBOND ELECTRONICS CORP. 发明人 LEE CHENG-SHENG
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
主权项
地址