发明名称 Zero temperature coefficient (TC) current source for diode measurement
摘要 A method and circuit for reducing a temperature dependent error in p-n junction based temperature measurements. The temperature-dependent error may be caused by parasitic resistance in a p-n junction and temperature dependent variation of a bias current in a temperature sensor. A difference in base-emitter voltage of a sensing transistor is employed to determine a temperature of a source device. In one embodiment, a zero Temperature Coefficient (TC) current source employing a temperature dependent variation of a current generates by an emitter-base voltage across a resistor between the emitter and the base of a junction transistor is used to counter balance a Proportional To Absolute Temperature (PTAT) current source.
申请公布号 US7150561(B1) 申请公布日期 2006.12.19
申请号 US20040943131 申请日期 2004.09.16
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 D'AQUINO DAN;ASLAN MEHMET
分类号 G01K7/00 主分类号 G01K7/00
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