发明名称 |
A BULK NON-PLANAR TRANSISTOR HAVING A STRAINED CHANNEL WITH ENHANCED MOBILITY AND METHODS OF FABRICATION |
摘要 |
<p>A method of a bulk tri-gate transistor having stained enhanced mobility and its method of fabrication. The present invention is a nonplanar transistor having a strained enhanced mobility and its method of fabrication. The transistor has a semiconductor body formed on a semiconductor substrate wherein the semiconductor body has a top surface on laterally opposite sidewalls. A semiconductor capping layer is formed on the top surface and on the sidewalls of the semiconductor body. A gate dielectric layer is formed on the semiconductor capping layer on the top surface of a semiconductor body and is formed on the capping layer on the sidewalls of the semiconductor body. A gate electrode having a pair of laterally opposite sidewalls is formed on and around the gate dielectric layer. A pair of source/ drain regions are formed in the semiconductor body on opposite sides of the gate electrode.</p> |
申请公布号 |
KR20060130704(A) |
申请公布日期 |
2006.12.19 |
申请号 |
KR20067020446 |
申请日期 |
2006.09.29 |
申请人 |
INTEL CORP. |
发明人 |
LINDERT NICK;CEA STEPHEN M. |
分类号 |
H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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