| 摘要 |
The present invention relates to a thin film transistor, a fabrication method thereof and a liquid crystal display having the thin film transistor, and an object of the present invention is to provide a thin film transistor which improves a fabrication yield, a fabrication method thereof and a liquid crystal display having the thin film transistor. In a bottom-gate-type thin film transistor 1 having a gate electrode 4 formed on a substrate, a gate insulating film 6 formed on the gate electrode, an operational semiconductor film 8 formed on the gate insulating film 6 on the gate electrode 4, a channel protection film 3 formed on the operational semiconductor film, and a source and a drain electrodes 14 and 15 formed on both sides of the top surface of the channel protection film 3 connected to the operational semiconductor film with the operational semiconductor, and the channel protection film 3 has a first insulating layer 10 contacting to an upper interface of the operational semiconductor film 8 and a second insulating layer 11 formed on the first insulating layer. |
