发明名称 BLOCK INSULATOR OF ION IMPLANTER
摘要 A block insulator of an ion implanter is provided to prevent beam deposition onto the block insulator by adding a protective shield on the block insulator. First and second insulators(102,104) are provided on one side of an arc chamber of a source head of an ion implanter, and are connected to each other to constantly maintain an interval between the insulators and a filament clamp. A protective shield(106) is provided on an upper end of the first insulator to protect source head short due to beam deposition. The protective shield has a shield portion(106a) for protecting the upper end of the first insulator and a fastening portion(106b) with both ends connected to the second insulator.
申请公布号 KR20060130295(A) 申请公布日期 2006.12.19
申请号 KR20050050896 申请日期 2005.06.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, DONG WOO
分类号 H01L21/265 主分类号 H01L21/265
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