| 摘要 |
A semiconductor device manufacturing apparatus for suppressing growth of a natural oxide layer and a method for fabricating a semiconductor by using the same are provided to improve an operational characteristic by suppressing an increase of contact resistance between a semiconductor substrate and a conductive layer. A cleaning unit(210) cleans a surface of a semiconductor substrate after an etch process for forming a contact hole to expose a surface of a semiconductor substrate. A deposition unit(220) deposits a conductive layer in the contact hole on the exposed surface of the semiconductor substrate. A load lock chamber(230) is positioned between the cleaning unit and the deposition unit in order to suppress growth of a natural oxide layer on the cleaned surface of the semiconductor substrate.
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