发明名称 SEMICONDUCTOR DEVICE HAVING A ALIGN MARK FILM AND METHOD OF FABRICATING THE SAME
摘要 <p>A semiconductor device and its manufacturing method are provided to reduce alignment errors in an assembling step by using an align mark layer. A semiconductor device includes a pad electrode layer, an align mark layer, a passivation layer and a transparent protection layer. The pad electrode layer(130) is formed on a semiconductor substrate(105). The pad electrode layer is used as input/output terminals. The align mark layer(135) is formed on the substrate to be used as an align key in an assembling step. The passivation layer(140) is formed on the substrate to expose partially upper portions of the pad electrode layer and the align mark layer. The transparent protection layer(150) is used for covering at least a portion of the passivation layer and the exposed upper portion of the align mark layer.</p>
申请公布号 KR100660893(B1) 申请公布日期 2006.12.18
申请号 KR20050111994 申请日期 2005.11.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, HO IK;LEE, SOO CHEOL
分类号 H01L23/12 主分类号 H01L23/12
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