METHOD FOR CONVERGING THE ERASE SPEED OF FLASH MEMORY CELLS

摘要

A flash memory device and an erasing method thereof are provided to improve stability of a programming process on the flash memory device by restricting threshold voltage dispersion in over-erased and under-erased memory cells. A flash memory device includes a memory cell array having plural word lines. The flash memory device includes a voltage generator(200) and a row decoder(210). The voltage generator generates first and second erasing voltages. The first erasing voltages represent plural voltages having different voltage levels. The row decoder delivers the first erasing voltage to the word lines of the memory cell array in an erasure process. The memory cell array is erased by applying the second erasing voltage on a bulk region while applying the first erasing voltages on the word lines.