发明名称 Transfer-molded power device and method for manufacturing transfer-molded power device
摘要 A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t 1 of the chip and the thickness t 2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t 2 /t 1 >=5. Furthermore, the thermal expansion coefficient alpha 1 of the heat sinks and the thermal expansion coefficient alpha 2 of the mold resin satisfy the equation of 0.5<=alpha 2/alpha1 <=1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra<=500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.
申请公布号 KR100659376(B1) 申请公布日期 2006.12.18
申请号 KR20020043963 申请日期 2002.07.25
申请人 发明人
分类号 H01L23/36;H01L21/301;H01L21/56;H01L23/367;H01L23/373;H01L23/433 主分类号 H01L23/36
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