| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to simplify manufacturing processes and to economize fabrication costs by forming simultaneously a general gate of a non-memory device and a floating gate of a memory device. A first gate(23a) of a first device region and a second gate(23b) of a second device region are simultaneously formed on a semiconductor substrate. A PMD(Pre-Metallic Dielectric)(27) is deposited thereon. A first contact hole for exposing the first gate to the outside is formed on the resultant structure by patterning selectively the PMD. A high-k dielectric material, a first metal material and a second metal material are formed thereon and planarized until the PMD is exposed to the outside. At this time, an insulating layer, a metal film and a third gate are formed in the first contact hole. A second contact hole for exposing the second gate to the outside is formed on the resultant structure by patterning the PMD. A contact made of a third metal material is formed in the second contact hole.</p> |
