| 摘要 |
<p>A method for manufacturing a fin-transistor of a semiconductor device is provided to simplify manufacturing processes, to economize fabrication costs and to reduce the resistance of source/drain regions by forming directly the fin-transistor on a semiconductor substrate. A first insulating layer(200) and a second insulating layer are sequentially formed on a semiconductor substrate(100). A groove is formed on the resultant structure by etching selectively the first and the second insulating layer. A fin for filling the groove is formed thereon. A well ion implantation and a threshold voltage controlling ion implantation are performed on the fin. The second insulating layer is removed therefrom. A gate insulating layer(610) and a gate conductive layer are formed on the fin. A gate(630) is formed by patterning selectively the gate conductive layer.</p> |
