发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma treatment apparatus is provided to prevent the damage of a substrate and to minimize an inner space of a vacuum chamber by supplying a properly mixed source gas into the chamber in an aiming dispersing speed state using an improved supply unit. A plasma treatment apparatus includes a supply unit. The supply unit(110) is composed of a diffusing part(120) for supplying a source gas in an upper electrode(100) and a spraying plate for spraying uniformly the source gas supplied from the diffusing part into a vacuum chamber(10). The diffusing part is composed of an inlet port(122), a diffuser(124) connected through the inlet port and a mixer(126) for mixing properly the source gas.
申请公布号 KR100660795(B1) 申请公布日期 2006.12.18
申请号 KR20050074142 申请日期 2005.08.12
申请人 INTEGRATED PROCESS SYSTEMS LTD. 发明人 LEE, JU HEE;HAN, JAE BYUNG
分类号 H01L21/205 主分类号 H01L21/205
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