发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
A plasma treatment apparatus is provided to prevent the damage of a substrate and to minimize an inner space of a vacuum chamber by supplying a properly mixed source gas into the chamber in an aiming dispersing speed state using an improved supply unit. A plasma treatment apparatus includes a supply unit. The supply unit(110) is composed of a diffusing part(120) for supplying a source gas in an upper electrode(100) and a spraying plate for spraying uniformly the source gas supplied from the diffusing part into a vacuum chamber(10). The diffusing part is composed of an inlet port(122), a diffuser(124) connected through the inlet port and a mixer(126) for mixing properly the source gas.
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申请公布号 |
KR100660795(B1) |
申请公布日期 |
2006.12.18 |
申请号 |
KR20050074142 |
申请日期 |
2005.08.12 |
申请人 |
INTEGRATED PROCESS SYSTEMS LTD. |
发明人 |
LEE, JU HEE;HAN, JAE BYUNG |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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