CMOS IMAGE SENSOR

摘要

A CMOS image sensor is provided to prevent the backflow of photoelectrons by controlling an equivalent capacitance value of a floating diffusion region using at least one capacitor. A CMOS image sensor includes a photodiode(PD) for converting a light energy into an electric signal, a transfer transistor(T11) for transferring the photoelectrons stored in the photodiode to a floating diffusion region, a select transistor(T14) for transferring the data signal capable of being changed according to a voltage level of the floating diffusion region to the outside in response to a select control signal, and at least one capacitor. The capacitor(C) is formed between the floating diffusion region and the select transistor to control an equivalent capacitance value of the floating diffusion region.