发明名称 METHOD AND APPARATUS FOR SELECTIVELY CHANGING THIN FILM COMPOSITION DURING ELECTROLESS DEPOSITION IN A SINGLE CHAMBER
摘要 A method and apparatus for electrolessly depositing a multilayer film using a processing solution(s) to clean and then electrolessly deposit a metal film having discrete or varying composition onto a conductive surface using a single processing cell. The process includes an in-situ cleaning step to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen between the cleaning and electroless deposition process steps. In one aspect, the chemical components used in the processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids. The continuous electroless deposition process may be used to form a first layer containing at least two of the following elements cobalt, tungsten, phosphorus or boron; and a second layer contains at least two of the following elements cobalt, boron or phosphorus.
申请公布号 KR20060129408(A) 申请公布日期 2006.12.15
申请号 KR20067017180 申请日期 2006.08.25
申请人 APPLIED MATERIALS INC. 发明人 WEIDMAN TIMOTHY W.;PANCHAM IAN;LUBOMIRSKY DMITRY;SHANMUGASUNDRAM ARULKUMAR;SHACHAM DIAMAND YOSEF;MOGHADAM FARHAD
分类号 C23C18/16;C23C18/50;H01L21/02;H01L21/288;H01L21/768 主分类号 C23C18/16
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