| 摘要 |
A semiconductor device is provided to reduce size of a device by forming a well pick-up region in a source region. A substrate(200) has a well region. At least one well pick-up region is formed on the well region. A source region(203) is formed on the substrate to surround the well pick-up region. A first drain region(202a) is formed on the substrate to be located on a side of the source region. A first gate electrode(201a) is formed on the substrate to be located between the source region and the first drain region. A second drain region(202b) is formed on the substrate to be located on the other side of the source region. A second gate electrode(201b) is formed on the substrate to be located on the source region and the second drain region. An end of the second electrode is connected to the first gate electrode.
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