| 摘要 |
A BJT(Bipolar Junction Transistor) and a manufacturing method thereof are provided to simplify manufacturing processes and to reduce remarkably the width of a base by using a double nitride spacer. A pair of first spacers(33a) are spaced apart from each other on a P type semiconductor substrate(30). A pair of second spacers(33b) are formed at inner sidewalls of the pair of first spacers, respectively. A lightly doped N type collector region(32) with a first depth is formed under the first spacer in the substrate. A lightly doped P type base region(34) with a second depth is formed at a predetermined portion between the first spacers in the substrate. The lightly doped P type base region is adjacent to the lightly doped N type collector region. A heavily doped N type emitter region(36) with a third depth is formed in the lightly doped P type base region between the second nitride spacers. A heavily doped N type collector region(37) is formed at outer sidewalls of the first spacers in the substrate. The heavily doped N type collector region is adjacent to the lightly doped N type collector region. A heavily doped P type base region(38) spaced apart from the heavily doped N type collector region is formed in the substrate.
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