发明名称 |
APPARATUS FOR CONTROLLING GAS FLOW IN A SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBER |
摘要 |
Apparatus for controlling the flow of a gas between a process region and an exhaust port in a semiconductor substrate processing chamber is provided. The apparatus includes at least one restrictor plate supported within the semiconductor processing chamber and at least partially circumscribing a substrate support pedestal. The restrictor plate is adapted to control the flow of at least one gas flowing between the process region and the exhaust port.
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申请公布号 |
KR20060129543(A) |
申请公布日期 |
2006.12.15 |
申请号 |
KR20067023427 |
申请日期 |
2005.04.01 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
BERA KALLOL;CHAE, HEE YEOP;TAVASSOLI HAMID;YE YAN |
分类号 |
H01L21/02;C23C16/44;C23C16/455;H01J37/32;H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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