| 摘要 |
A method for fabricating a metal wire in a semiconductor device is provided to prevent corrosion of an exposed metal wire by forming an oxide layer on a surface of the exposed metal wire. A first metal wire(120) is formed on a semiconductor substrate(100). Dielectrics(110,130) are formed on the whole surface of the semiconductor substrate including the first metal wire. A via hole(150) is formed by selectively removing the dielectrics to expose a predetermined portion of the surface of the first metal wire. An oxide layer is formed on the surface of the first exposed metal wire. A cleaning process is performed on the whole surface of the semiconductor substrate to remove a particle. The oxide layer is removed. A second metal wire is formed to be electrically connected to the first metal wire through the via hole.
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