| 摘要 |
A high voltage generation circuit and a semiconductor memory device comprising the same are provided to preserve charges charged in capacitors in a charge pump circuit, by separating a charge pump output node from an external node out of the charge pump circuit when the charge pump circuit is disabled. In a circuit for generating a higher voltage than a power supply voltage, a comparison part is electrically connected to a final output node(NO), and generates a comparison signal by comparing the voltage of the final output node or the voltage obtained by dividing the final output node voltage with a reference voltage. A logic part generates a pump clock signal having a fixed period, in response to a pump enable signal and the comparison signal. A charge pump part(120) comprises a number of capacitors, and generates a pump output voltage through a pump output node by pumping charges in the capacitors in response to the pump clock signal. A switching part(130) selectively connects the pump output node to the final output node, in response to the pump enable signal.
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