| 摘要 |
A CMOS image sensor and its manufacturing method are provided to prevent a dark current by reducing plasma damage generated in a substrate when a gate poly is formed. A semiconductor substrate(51) defined as a pixel array region(A), a low voltage region(B), and a high voltage region(C) is prepared. A first gate dielectric(52) is formed on the whole surface of the semiconductor substrate. The first gate dielectric of the low voltage region and the high voltage region is selectively removed to remain only on the pixel array region of the semiconductor substrate. A second gate dielectric(53) is formed on the whole surface of the semiconductor substrate including the first gate dielectric. The second gate dielectric of the low voltage region is selectively removed to remain only on the pixel array region and the high voltage region of the semiconductor substrate. A third gate dielectric(54) is formed on the whole surface including the first and the second gate dielectrics.
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