BIPOLAR JUNCTION TRANSISTOR AND FABRICATION METHOD THEREOF

摘要

A BJT(Bipolar Junction Transistor) and a manufacturing method thereof are provided to minimize the distance between emitter and base and to improve base voltage characteristics and operation characteristics by using a trench process and an insulating spacer. A buried layer(21a) and a heavily doped N type collector region(21) are formed in a P type semiconductor substrate(20). A lightly doped P type base region is formed on the buried layer in the substrate. A first heavily doped P type base region is formed along a periphery of the lightly doped P type base region. A second heavily doped P type base region(23b) is formed at the center of the lightly doped P type base region. A heavily doped N type emitter region is formed between the first and the second heavily doped P type based regions. An insulating spacer(25c) is formed between the heavily doped base regions and the heavily doped emitter region.