| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of manufacturing an SiC high breakdown voltage semiconductor in high yield and throughput by enabling vapor epitaxial growing of a semiconductor single crystal silicon carbide (SiC) film by using a polycrystal silicon carbide (SiC) substrate having ion-implanted impurity atoms as a source in addition to recovering micropipe defects of a single crystal silicon carbide (SiC) in a short time. SOLUTION: The single crystal silicon carbide (SiC) substrate 5 is close to or kept in close contact to the polycrystal SiC substrate 19 having a surface subjected to ion implantation, and the substrate 19 is housed in a sealing container and is heated at a high temperature of 1,600°C to 2,100°C (preferably, 1,700°C to 1,900°C) in a short time to apply heat processing. Preferably, the distance between the substrate 5 and the substrate 19 (size of gap g) is a close state or not more than 0.6 mm, and more preferably, it is 0.1 mm to 0.3 mm. COPYRIGHT: (C)2007,JPO&INPIT
|
