Accelerated particle and high energy radiation sensor

摘要

An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate ( 10 ), an epi layer ( 11 ), a p+ well ( 12 ) and n+ wells ( 13 ) which are separated from the p+ well ( 12 ) by the epi layer ( 11 ). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region ( 15 ) beneath the p+ well ( 12 ) which establishes within the epi layer a depletion layer so that on application of a biasing voltage charge carriers generated in the epi layer are caused to drift to the n+ well ( 13 ). The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes.