| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element of for example gallium nitride in which a countermeasure for preventing a destruction of a semiconductor layer due to an electric current convergence into a pit, and for preventing a leaking electric current in a reverse direction which is generated in a pit, is taken; a manufacturing method thereof; a semiconductor device; and a manufacturing method thereof. <P>SOLUTION: This semiconductor element is manufactured by a method of laminating sequentially a gallium nitride buffer layer 2, an n-type gallium nitride layer 3 in which silicon atoms are doped, an indium-gallium nitride active layer 4, and a p-type gallium nitride layer 5 in which magnesium atoms are doped on the (0001) surface of a sapphire substrate 1 according to an epitaxial growth method; disposing an insulating material layer 14 comprising silicon oxide on the p-type gallium nitride layer 5 according to a CVD method or the like; removing unnecessary parts of the insulating material layer 14 by etching while leaving only insulating layers 13 in pits 12; planarizing the surface of the p-type gallium nitride layer 5; and disposing a p electrode 8 on the planarized surface of the p-type gallium nitride layer 5. <P>COPYRIGHT: (C)2007,JPO&INPIT |
