发明名称 SPUTTERING FILM DEPOSITION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To improve productivity by providing a method by which the lowering of the deposition speed of a thin film, that is caused by densifying the structure of the thin film, is suppressed to be minimum and the change with the passage of time of optical characteristics is suppressed to be minimum. <P>SOLUTION: The method has a process for depositing an oxide thin film by sticking sputtering particles of a target onto a substrate in a reduced pressure atmosphere. In the process, after depositing the thin film under such a condition that gaseous argon and gaseous oxygen are introduced into the reduced pressure atmosphere, moisture is added in addition to the gaseous argon and gaseous oxygen without stopping discharge or changing the conditions and the film deposition is continued, and thereafter the film deposition is completed. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006336084(A) 申请公布日期 2006.12.14
申请号 JP20050163853 申请日期 2005.06.03
申请人 CANON INC 发明人 TAKAHASHI TSUKASA
分类号 C23C14/34;G02B1/11;G02B5/28 主分类号 C23C14/34
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