发明名称 VAPOR PHASE DEPOSITION SYSTEM, AND VAPOR PHASE DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor phase deposition system and a vapor phase deposition method capable of preventing the non-uniformity of quality in a deposition film surface by preventing pattern deviation caused by the distortion, expansion/contraction or the like of a mask when patterning and depositing a raw film by the vapor phase deposition method by using the mask. SOLUTION: The vapor phase deposition system comprises: a vapor deposition chamber which is evacuated by an evacuation means by depositing at least one layer of a raw film on a substrate by a vapor phase deposition method; a substrate arrangement means of the substrate; a raw material evaporation means to evaporate a raw material; and a mask arrangement means of a mask to regulate the deposition area of a deposition film with respect to the substrate. The vapor phase deposition system is capable of controlling the temperature of the mask to the temperature history of the substrate by a temperature control mechanism at least while depositing the raw material film on the substrate. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006336037(A) 申请公布日期 2006.12.14
申请号 JP20050158883 申请日期 2005.05.31
申请人 KONICA MINOLTA HOLDINGS INC 发明人 AKAGI KIYOSHI;AOKI KEIICHI
分类号 C23C14/24 主分类号 C23C14/24
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