发明名称 |
VAPOR PHASE DEPOSITION SYSTEM, AND VAPOR PHASE DEPOSITION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase deposition system and a vapor phase deposition method capable of preventing the non-uniformity of quality in a deposition film surface by preventing pattern deviation caused by the distortion, expansion/contraction or the like of a mask when patterning and depositing a raw film by the vapor phase deposition method by using the mask. SOLUTION: The vapor phase deposition system comprises: a vapor deposition chamber which is evacuated by an evacuation means by depositing at least one layer of a raw film on a substrate by a vapor phase deposition method; a substrate arrangement means of the substrate; a raw material evaporation means to evaporate a raw material; and a mask arrangement means of a mask to regulate the deposition area of a deposition film with respect to the substrate. The vapor phase deposition system is capable of controlling the temperature of the mask to the temperature history of the substrate by a temperature control mechanism at least while depositing the raw material film on the substrate. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2006336037(A) |
申请公布日期 |
2006.12.14 |
申请号 |
JP20050158883 |
申请日期 |
2005.05.31 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
AKAGI KIYOSHI;AOKI KEIICHI |
分类号 |
C23C14/24 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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