发明名称 Deep quantum well electro-absorption modulator
摘要 Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
申请公布号 US2006279828(A1) 申请公布日期 2006.12.14
申请号 US20050148467 申请日期 2005.06.08
申请人 BOUR DAVID P;TANDON ASHISH;TAN MICHAEL R T 发明人 BOUR DAVID P.;TANDON ASHISH;TAN MICHAEL R.T.
分类号 G02F1/03 主分类号 G02F1/03
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