| 摘要 |
<p>A method for manufacturing a split-gate type nonvolatile memory device is provided to prevent conductive stringer by improving the profile of a first conductive pattern. An active region is defined in a semiconductor substrate(10). A charge storage layer(14) and a first conductive layer are formed on the active region. A first conductive pattern(16) is formed by tilt-etching the first conductive layer, wherein the width of the lower part of the first conductive pattern is wider than that of the upper part. A sidewall oxide layer(22) is formed at both sidewalls of the first conductive pattern by oxidation processing. A second conductive layer is formed on the resultant structure. A pair of first electrodes and second electrodes are then formed by simultaneously patterning the first conductive pattern and the second conductive layer.</p> |
