| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory system for speeding up read/write. <P>SOLUTION: This memory system is provided with a ferroelectric memory 14 where a plurality of memory cells respectively constituted of a ferroelectric capacitor and a cell transistor are arranged, flash type EEPROM memories 13-1 through 13-n where memory cells with floating gates enabling electric data erasure and write are arranged, a control circuit 15 for controlling the ferroelectric memory and the flash type EEPROM memory and an interface circuit for communicating with the outside. Data are stored in the flash type EEPROM memory, and at least one of route information for storing data, directory information, data file name, data file size, file allocation table information for storing the storage place of data and data write end time is stored in the ferroelectric memory. <P>COPYRIGHT: (C)2007,JPO&INPIT |
