| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage device capable of suppressing power consumption and quickly erasing a memory array. SOLUTION: In the storage device, memory cells are arranged in a matrix. Each memory cell comprises a memory element in which writing is executed by applying a voltage higher than or equal to a first voltage threshold value, and erasing is executed by applying a voltage higher than or equal to a second voltage threshold value, and a MOS transistor. When memory cells are erased, while an erase voltage is applied to a predetermined unit of memory cells which are to be erased earlier, the erase voltage is applied to a predetermined unit of memory cells which are to be erased later after 1 ns has passed since the erase voltage was applied to the predetermined unit of memory cells which are to be erased earlier. COPYRIGHT: (C)2007,JPO&INPIT |
