Method for fabricating semiconductor device with step gated asymmetric recess structure

摘要

A method for fabricating a semiconductor device with a step gated asymmetric recess structure is provided. The method includes: forming an anti-scattering reflection layer on a substrate; forming a mask on the anti-scattering reflection layer; etching the anti-scattering reflection layer using the mask as an etch barrier; and etching predetermined portions of the substrate using the mask as an etch barrier to thereby form recessed active regions and a protruded active region.