| 摘要 |
<p>A light extraction efficiency of a semiconductor light emitting element is improved. In the semiconductor light emitting element (10), a buffer layer (14), an n-type GaN layer (16), an InGaN light emitting layer (18) and a p-type GaN layer (32) are stacked on a sapphire substrate (12). On the p-type GaN layer (32), a ZnO layer (24) which functions as a transparent electrode is arranged, and on the surface of the ZnO layer (24), recessed sections are formed at two-dimensional periodic intervals. The periodic intervals L<SUB>z</SUB> of the adjacent recessed sections are set within a range satisfying ?/n<SUB>Z?</SUB>=L<SUB>Z</SUB>=?/(n<SUB>Z?</SUB>OE1-sin?<SUB>Z</SUB>)), where ? is a wavelength of light from the InGaN light emitting layer (18) in the air, n<SUB>Z? </SUB>is a refraction index of the light having the wavelength ? in the ZnO layer, and ?<SUB>Z </SUB>is the total reflection angle on an interface between the ZnO layer and a medium in contact with the ZnO layer.</p> |
