SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor apparatus and a manufacturing method thereof are provided to alleviate the strength of electric field around drain by employing an LDD region overlapped with a gate electrode only at the drain. A dielectric(102) is formed on a semiconductor layer(103). Conductive layers(105a,106a) are formed on the dielectric. A resist pattern(107a) is formed on the conductive layer by using a photo mask or a reticle. The resist pattern has a first part whose layer thickness is thick and a second part whose layer thickness is thinner than the first part. The conductive layer is selectively etched to form gate electrodes(105b,106b) having a first part whose layer thickness is thick and a second part whose layer thickness is thicker than the first part. Impurity element is implanted into the semiconductor layer by using the first part and the second part of the gate electrode as a mask to form a first impurity region(110) on both sides of a channel forming region overlapped with the gate electrode on the semiconductor layer. Impurity element is implanted into the semiconductor layer through the second part of the gate electrode to form a second impurity region(111) in a region overlapped with the second part of the gate electrode.