| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable surely read-out even when storage node voltage is reduced. <P>SOLUTION: The apparatus has a variable capacitance capacitor C for each memory cell 1A. One electrode of the variable capacitance capacitor C is connected to a storage node SN, and the other electrode is connected to a control line ( read-out word line RWL) to which high level voltage is applied at the time of data output. A capacity value of the variable capacitance capacitor C is varied in accordance with a voltage level of the storage node SN at the time of data holding, and voltage of the storage node is boosted by applying high level voltage from the read-out word line RWL. <P>COPYRIGHT: (C)2007,JPO&INPIT |
