FILM FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method which forms an insulating film of a low dielectric constant having a dielectric constant lower than 2.7, and a barrier insulating film having a dielectric constant lower than 4 using a chemical vapor deposition method. SOLUTION: The plasma of a film forming gas containing a first silicon containing organic compound which has a cyclic structure more than five-ring silicon atoms, and has a siloxane coupling of a silicon atom; and a second silicon containing organic compound which has a cyclic structure lower than four-ring silicon atoms or a chain structure lower than 4 silicon atoms, and has a siloxane coupling of a silicon atom, is produced and reacted to form an insulating film 32 on a substrate 31. COPYRIGHT: (C)2007,JPO&INPIT