发明名称 LIGHT-EMITTING DIODE AND ITS FABRICATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a light emitting diode having a region (etching region) roughened by etching at least partially on the surface in which a thin-film transparent conductive film can be formed into an effective form in the etching region and the efficiency of LED can be sharply enhanced, and to provide its fabrication method. <P>SOLUTION: A semiconductor region is made by forming an n-type semiconductor layer and a p-type semiconductor layer sequentially, a high efficiency light extraction region is made, by forming a plurality of holes in the surface of the semiconductor region, and a transparent electrode forming region is made by forming transparent electrodes made of a transparent conductive film continuously in the flat region of the high efficiency light extraction region, thus fabricating a light-emitting diode. Area percentage of the plurality of holes in the high efficiency light extraction region is 10-80%. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006339426(A) 申请公布日期 2006.12.14
申请号 JP20050162628 申请日期 2005.06.02
申请人 HITACHI CABLE LTD 发明人 FUJIKURA TSUNEAKI;OSHIMA YUICHI
分类号 H01L33/06;H01L33/12;H01L33/30;H01L33/42 主分类号 H01L33/06
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