| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method whereby the productivity is suitably enhanced by avoiding a problem of production of particles in an apparatus of prior arts for forming a thin film on a semiconductor substrate under a pressure atmosphere close in particular to an atmospheric pressure. SOLUTION: The film forming apparatus disclosed herein includes at least a reaction chamber for forming a thin film on a semiconductor substrate, a gas supply system, and a gas exhaust system. The gas exhaust system is configured with a first exhaust pipe connected to the reaction chamber, and second and third exhaust pipes branched from the first exhaust pipe. The second exhaust pipe includes a first valve and a first pressure control valve, and the third exhaust pipe includes a second valve and a second pressure control valve. The first and second valves are not opened at the same time, and the first and second pressure control valves are configured to function independently of each other. COPYRIGHT: (C)2007,JPO&INPIT
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