发明名称 Abnormality cause specifying method, abnormality cause specifying system, and semiconductor device fabrication method
摘要 A feature amount is generated by standardizing inspection data related to a fabrication unit for each type, a similar set including fabrication units corresponding to similar feature amounts is formed by comparing the feature amounts, and apparatus difference analysis is performed between a plurality of fabrication units forming the similar set. A two-level orthogonal table is used to determine whether to adopt a feature amount of each type, and some feature amounts are not used in the apparatus difference analysis and the like by optimizing the smaller-the-better characteristic or the larger-the-better characteristic of a test value of the apparatus difference analysis, thereby reducing the calculation amount and accurately and efficiently specifying an abnormality cause.
申请公布号 US2006281199(A1) 申请公布日期 2006.12.14
申请号 US20060452305 申请日期 2006.06.14
申请人 MATSUSHITA HIROSHI 发明人 MATSUSHITA HIROSHI
分类号 H01L21/66;G01R31/26 主分类号 H01L21/66
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