| 摘要 |
A photomask for defining a photoresist layer formed on a wafer having at least an alignment mark region, wherein each alignment mark region has an alignment mark. The photomask comprises a shot region and an alignment mark pattern region. The alignment mark pattern region has a profile equal to the profile of the alignment mark region on the wafer. Further, the alignment mark pattern region comprises a block region, a clean-out region and a dummy pattern region. The position of the block region in the alignment mark pattern region is corresponding to the relative position of the alignment mark in the alignment mark region. The clean-out region is adjacent to one side of the block region and the dummy pattern region is adjacent to another side of the block region.
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