| 摘要 |
A semiconductor device comprises a lower substrate, an interlayer insulation film formed on the lower substrate, a first wiring pattern having a first wiring layer formed on the lower substrate, a first fuse formed on the interlayer insulation film, and a first contact plug electrically connected between the first wiring layer and first fuse; and a second wiring pattern having a second wiring layer, a second fuse formed on the interlayer insulation film, and a second contact plug electrically connected between the second wiring layer and the second fuse. The second fuse has a region which does not overlap with the first fuse in a width direction, the second wiring pattern is separated from the first wiring pattern by a predetermined distance, and the first fuse has a region which does not overlap with the second fuse in a width direction.
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